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| FDZ7064AS 30V N-Channel PowerTrench(R) SyncFETTM BGA MOSFET December 2004 FDZ7064AS 30V N-Channel PowerTrench(R) SyncFETTM BGA MOSFET Features 13.5 A, 30 V. RDS(ON) = 5.6 m @ VGS = 10 V RDS(ON) = 7.1 m @ VGS = 4.5 V Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 Ultra-thin package: less than 0.76 mm height when mounted to PCB 3.5 x 4 mm2 Footprint High power and current handling capability. General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild's 30V PowerTrench SyncFET process with state of the art BGA packaging, the FDZ7064AS minimizes both PCB space and RDS(ON). This BGA SyncFET embodies a breakthrough in both packaging and power MOSFET integration which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, ultra-low reverse recovery charge and low RDS(ON). Applications DC/DC converters Pin 1 D D D D D D F7064AS D S S S G D S S S S D S S S S D S S S S D D D D D G Pin 1 S Bottom Top Absolute Maximum Ratings TA=25C unless otherwise noted Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation (Steady State) (Note 1a) (Note 1a) Parameter Ratings 30 20 13.5 60 2.2 -55 to +150 Units V V A W C Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJB RJC Thermal Resistance, Junction-to-Ambient (Note 1a) Thermal Resistance, Junction-to-Ball (Note 1) Thermal Resistance, Junction-to-Case (Note 1) 56 4.5 0.6 C/W Package Marking and Ordering Information Device Marking 7064AS Device FDZ7064AS Reel Size 13" Tape width 12mm Quantity 3000 (c)2004 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDZ7064AS Rev. A FDZ7064AS 30V N-Channel PowerTrench(R) SyncFETTM BGA MOSFET Electrical Characteristics TA = 25C unless otherwise noted Symbol Off Characteristics BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) Drain-Source Breakdown Voltage VGS = 0 V, ID = 1mA 30 25 500 100 V mV/C uA nA Breakdown Voltage Temperature Coefficient ID = 10mA, Referenced to 25C Zero Gate Voltage Drain Current Gate-Body Leakage VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 1mA ID = 10mA, Referenced to 25C VGS = 10 V, ID = 13.5 A VGS = 4.5 V, ID = 12 A VGS=10 V, ID=13.5A, TJ =125C VGS = 10 V,VDS = 5 V VDS = 5 V, ID = 13.5 A VDS = 15 V, V GS = 0 V, f = 1.0 MHz 60 61 1 1.4 -0.3 4.6 5.7 5.9 5.6 7.1 7.4 Parameter Test Conditions Min Typ Max Units On Characteristics (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance 3 V mV/C m ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg(TOT) Qg Qgs Qgd VSD trr Qrr Notes: 1. A S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS = 15 mV, ID = 6 A VDS = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 1960 570 210 1.4 pF pF pF W Switching Characteristics (Note 2) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge, Vgs = 10V Total Gate Charge, Vgs = 5V Gate-Source Charge Gate-Drain Charge VDS = 15 V, ID = 13.5A 9 12 39 18 36 20 5 6 18 22 62 33 51 28 nS nS nS nS nC nC nC nC Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.2 A (Note 1) IF = 13.5 A, diF/dt = 300 A/s See Diode Characteristic, page 5 0.4 23 21 0.7 V nS nC RJA is determined with the device mounted on a 1 in2 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RJB, is defined for reference. For RJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user's board design. a) 56C/W when mounted on a 1in2 pad of 2 oz copper b) 119C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 2 FDZ7064AS Rev. A www.fairchildsemi.com FDZ7064AS 30V N-Channel PowerTrench(R) SyncFETTM BGA MOSFET Typical Characteristics 60 VGS=10.0V 2.25 50 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5V 4.5V 3.0V VGS = 3.0V ID, DRAIN CURRENT (A) 6.0V 2 1.75 1.5 1.25 1 0.75 3.5V 4.0V 4.5V 6.0V 10.0V 40 30 20 2.5V 10 0 0 0.25 0.5 0.75 VDS, DRAIN-SOURCE VOLTAGE (V) 1 0 10 20 30 40 50 60 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.02 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.2 RDS(ON), ON-RESISTANCE (OHM) ID = 13.5A VGS = 10V ID =6.8A 0.0175 0.015 0.0125 0.01 TA = 125C 0.0075 0.005 TA = 25C 0.0025 1 0.8 0.6 -50 -25 0 25 50 75 TJ, JUNCTION TEMPERATURE (C) 100 125 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 60 VDS = 5V Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V IS, REVERSE DRAIN CURRENT (A) 50 10 TA = 125C 25C -55C ID, DRAIN CURRENT (A) 40 30 TA = 125C -55C 1 0.1 20 10 25C 0.01 0.001 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3 FDZ7064AS Rev. A www.fairchildsemi.com FDZ7064AS 30V N-Channel PowerTrench(R) SyncFETTM BGA MOSFET Typical Characteristics 10 3000 ID = 13.5A f = 1MHz VGS = 0 V 2500 VGS, GATE-SOURCE VOLTAGE (V) 8 CAPACITANCE (pF) VDS = 10V 2000 6 20V Ciss 1500 Coss 1000 4 15V 2 500 Crss 0 0 0 10 20 Qg, GATE CHARGE (nC) 30 40 0 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 100 RDS(ON) LIMIT 10ms 10 100ms 1s 1 VGS = 10V SINGLE PULSE RJA = 119C/W TA = 25C 0.01 0.01 DC 10s 1ms 40 SINGLE PULSE RJA = 119C/W TA = 25C 30 20 0.1 10 0.1 1 10 100 0 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 119C/W 0.05 0.02 0.1 0.1 P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.01 0.001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 4 FDZ7064AS Rev. A www.fairchildsemi.com FDZ7064AS 30V N-Channel PowerTrench(R) SyncFETTM BGA MOSFET Typical Characteristics SyncFET Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDZ7064AS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.01 IDSS, REVERSE LEAKAGE CURRENT (A) TA = 125C 0.001 TA = 100C 0.0001 TA = 25C CURRENT : 0.4A/div 0.00001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30 Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature. TIME : 12.5ns/div Figure 12. FDZ7064AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET . CURRENT : 0.4A/div TIME : 12.5ns/div Figure 13. Non-SyncFET (FDZ7064N) body diode reverse recovery characteristic. 5 FDZ7064AS Rev. A www.fairchildsemi.com FDZ7064AS 30V N-Channel PowerTrench(R) SyncFETTM BGA MOSFET Dimensional Outline and Pad Layout 4.000.15 0.30 GATE C L INDEX SLOT C L 1 2 3 4 5 6 SOURCE A B 0.65 C L C DRAIN 3.600.20 D 2.60 E 0.65 2.60 TOP VIEW LAND PATTERN RECOMMENDATION 0.25^0.15 0.76 MAX SOLDER BALL, 0.300.03 SOLDER BALL C L 0.10 0.30 FRONT VIEW E 2.60 D 0.51 BALL C L C 0.65 B INDEX SLOT (HIDDEN) A 1 2 3 4 5 6 SEATING PLANE 0.65 SIDE VIEW GATE 3.25 NOTES: UNLESS OTHERWISE SPECIFIED A) ALL DIMENSIONS ARE IN MILLIMETERS. B) NO JEDEC REGISTRATION REFERENCE AS OF JULY 1999. BOTTOM VIEW 6 FDZ7064AS Rev. A www.fairchildsemi.com FDZ7064AS 30V N-Channel PowerTrench(R) SyncFETTM BGA MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I14 7 FDZ7064AS Rev. A www.fairchildsemi.com |
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